Samsung M3 93T5750CZA-CE6 2GB vs Mushkin 99[2/7/4]192[F/T] 4GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Mushkin 99[2/7/4]192[F/T] 4GB

Mushkin 99[2/7/4]192[F/T] 4GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 15.8

测试中的平均数值

Mushkin 99[2/7/4]192[F/T] 4GB

需要考虑的原因
Mushkin 99[2/7/4]192[F/T] 4GB

报告一个错误

低于PassMark测试中的延时，ns

65 77

左右 -18% 更低的延时
更快的写入速度，GB/s

8.5 2,622.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Mushkin 99[2/7/4]192[F/T] 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 65
读取速度，GB/s

3,405.2 15.8
写入速度，GB/s

2,622.0 8.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 1932

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Mushkin 99[2/7/4]192[F/T] 4GB

Mushkin 99[2/7/4]192[F/T] 4GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

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Patriot Memory (PDP Systems) PSD416G21332S 16GB

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Samsung M393B5270CH0-CH9 4GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Apacer Technology 78.C2GFA.AF30B 8GB

Apacer Technology 78.C2GFA.AF30B 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

G Skill Intl F4-3000C15-4GRK 4GB

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Samsung M386A2G40DB0-CPB 16GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB