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Samsung M378A1G43DB0-CPB 8GB
G Skill Intl F4-3600C19-8GSXK 8GB
比较
Samsung M378A1G43DB0-CPB 8GB vs G Skill Intl F4-3600C19-8GSXK 8GB
总分
Samsung M378A1G43DB0-CPB 8GB
总分
G Skill Intl F4-3600C19-8GSXK 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB
报告一个错误
需要考虑的原因
G Skill Intl F4-3600C19-8GSXK 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
36
左右 -33% 更低的延时
更快的读取速度,GB/s
19.2
15
测试中的平均数值
更快的写入速度,GB/s
13.4
10.3
测试中的平均数值
规格
完整的技术规格清单
Samsung M378A1G43DB0-CPB 8GB
G Skill Intl F4-3600C19-8GSXK 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
36
27
读取速度,GB/s
15.0
19.2
写入速度,GB/s
10.3
13.4
内存带宽,mbps
17000
17000
Other
描述
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2569
3399
Samsung M378A1G43DB0-CPB 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3600C19-8GSXK 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology NT4GC64B8HG0NS-DI 4GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
Kingston 9965433-034.A00LF 4GB
Corsair CM4X4GF2133C15S2 4GB
A-DATA Technology DQVE1908 512MB
Kingston 9905702-029.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KHYXPX-MID 8GB
Samsung 1600 CL10 Series 8GB
Transcend Information TS2GSH64V1B 16GB
Swissbit MEU25664D6BC2EP-30 2GB
Crucial Technology BL8G32C16U4WL.8FE 8GB
Crucial Technology 8G4US2400.M8B1 8GB
Samsung M378A1G43EB1-CPB 8GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMK128GX4M8Z2933C16 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology CT16G4S24AM.M16FE 16GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMR128GX4M8Z2933C16 16GB
SK Hynix HMT351U6CFR8C-H9 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Essencore Limited KD4AGU880-34A170X 16GB
Samsung M393B5170EH1-CH9 4GB
Crucial Technology BL8G32C16U4WL.M8FE 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT8G4SFS832A.C8FP 8GB
报告一个错误
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Bug description
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