Samsung M378B5273CH0-CH9 4GB vs AMD R534G1601U1S 4GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

AMD R534G1601U1S 4GB

AMD R534G1601U1S 4GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 68

左右 46% 更低的延时
更快的读取速度，GB/s

13.2 6.5

测试中的平均数值
更快的写入速度，GB/s

8.4 4.7

测试中的平均数值

AMD R534G1601U1S 4GB

需要考虑的原因
AMD R534G1601U1S 4GB

报告一个错误

更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

AMD R534G1601U1S 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

37 68
读取速度，GB/s

13.2 6.5
写入速度，GB/s

8.4 4.7
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2143 1209

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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