Samsung M378B5673EH1-CF8 2GB vs G Skill Intl F4-3600C18-16GTZN 16GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

G Skill Intl F4-3600C18-16GTZN 16GB

G Skill Intl F4-3600C18-16GTZN 16GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 30

左右 7% 更低的延时

G Skill Intl F4-3600C18-16GTZN 16GB

需要考虑的原因
G Skill Intl F4-3600C18-16GTZN 16GB

报告一个错误

更快的读取速度，GB/s

17.7 12.7

测试中的平均数值
更快的写入速度，GB/s

14.8 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-3600C18-16GTZN 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 30
读取速度，GB/s

12.7 17.7
写入速度，GB/s

7.5 14.8
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1988 3606

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Virtium Technology Inc. VL33A1G63F-N6S 8GB

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Patriot Memory (PDP Systems) PSD44G240081S 4GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Team Group Inc. TEAMGROUP-UD4-3200 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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G Skill Intl F4-3600C18-32GTZN 32GB

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Kingston HP32D4U8S8HC-8X 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Kingston ACR26D4S9D8ME-16 16GB

Kingston ACR26D4S9D8ME-16 16GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

AMD R744G2400U1S-UO 4GB

AMD R744G2400U1S-UO 4GB

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Samsung M471B1G73QH0-YK0 8GB

Micron Technology M471A1K43BB1-CRC 8GB

Micron Technology M471A1K43BB1-CRC 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

SK Hynix HMA42GR7AFR4N-UH 16GB

SK Hynix HMA42GR7AFR4N-UH 16GB