Samsung M378B5673EH1-CF8 2GB vs Micron Technology 18ASF1G72PZ-2G3B1 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 45

左右 38% 更低的延时
更快的读取速度，GB/s

12.7 11.7

测试中的平均数值
更高的内存带宽，mbps

8500 1900

左右 4.47% 更高的带宽

Micron Technology 18ASF1G72PZ-2G3B1 8GB

需要考虑的原因
Micron Technology 18ASF1G72PZ-2G3B1 8GB

报告一个错误

更快的写入速度，GB/s

8.4 7.5

测试中的平均数值

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 45
读取速度，GB/s

12.7 11.7
写入速度，GB/s

7.5 8.4
内存带宽，mbps

8500 1900

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-1900, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz no data
排名PassMark (越多越好)

1988 2387

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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