Samsung M391B5673EH1-CH9 2GB vs Chun Well Technology Holding Limited D4U0826190B 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Chun Well Technology Holding Limited D4U0826190B 8GB

Chun Well Technology Holding Limited D4U0826190B 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 29

左右 10% 更低的延时

Chun Well Technology Holding Limited D4U0826190B 8GB

需要考虑的原因
Chun Well Technology Holding Limited D4U0826190B 8GB

报告一个错误

更快的读取速度，GB/s

16.7 12.8

测试中的平均数值
更快的写入速度，GB/s

12.9 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Chun Well Technology Holding Limited D4U0826190B 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 29
读取速度，GB/s

12.8 16.7
写入速度，GB/s

9.0 12.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2143 3273

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Chun Well Technology Holding Limited D4U0826190B 8GB

Chun Well Technology Holding Limited D4U0826190B 8GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Kingston 9905678-012.A00G 8GB

Kingston 9905678-012.A00G 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

G Skill Intl F4-2666C19-8GRS 8GB

G Skill Intl F4-2666C19-8GRS 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Apacer Technology GD2.22428S.001 8GB

Apacer Technology GD2.22428S.001 8GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Neo Forza NMUD480E86-3200 8GB

Neo Forza NMUD480E86-3200 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Netac Technology Co Ltd EKBLACK4083016A 8GB

Netac Technology Co Ltd EKBLACK4083016A 8GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

Samsung M393A2K43BB1-CPB 16GB

Samsung M393A2K43BB1-CPB 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Crucial Technology BLS8G4D30AESCK.M8FE 8GB

Crucial Technology BLS8G4D30AESCK.M8FE 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-2800C16-4GVR 4GB

G Skill Intl F4-2800C16-4GVR 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Kingston ASU21D4U5S1MB-4 4GB

Kingston ASU21D4U5S1MB-4 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Corsair CMR64GX4M8C3000C15 8GB

Corsair CMR64GX4M8C3000C15 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Kingmax Semiconductor GLLH22F-18KII5------ 16GB

Kingmax Semiconductor GLLH22F-18KII5------ 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Corsair CMK32GX4M4A2400C12 8GB

Corsair CMK32GX4M4A2400C12 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Kingston 9905665-020.A00G 4GB

Kingston 9905665-020.A00G 4GB