Samsung M393B1G70BH0-CK0 8GB vs G Skill Intl F4-3200C16-32GTZR 32GB

总分

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分

G Skill Intl F4-3200C16-32GTZR 32GB

G Skill Intl F4-3200C16-32GTZR 32GB

差异规格评论

差异

Samsung M393B1G70BH0-CK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB

报告一个错误

G Skill Intl F4-3200C16-32GTZR 32GB

需要考虑的原因
G Skill Intl F4-3200C16-32GTZR 32GB

报告一个错误

低于PassMark测试中的延时，ns

30 51

左右 -70% 更低的延时
更快的读取速度，GB/s

17.6 9.8

测试中的平均数值
更快的写入速度，GB/s

15.1 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-CK0 8GB

G Skill Intl F4-3200C16-32GTZR 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 30
读取速度，GB/s

9.8 17.6
写入速度，GB/s

8.1 15.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2208 3728

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2400C15-8GNS 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Micron Technology 16G3200CL22 16GB

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AMD R5S38G1601U2S 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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G Skill Intl F4-2400C15-16GTZRX 16GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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G Skill Intl F4-4000C14-16GTZR 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

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G Skill Intl F4-4000C18-8GTRG 8GB

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Micron Technology 9ASF1G72PZ-2G9E1 8GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Samsung M378A1K43BB1-CRC 8GB

Samsung M378A1K43BB1-CRC 8GB

Crucial Technology CT51264BD160B.C16F 4GB

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Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

A-DATA Technology AM2P26KC8T1-BXRS 8GB

A-DATA Technology AM2P26KC8T1-BXRS 8GB