RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT8G4SFS8213.M8FA 8GB

Samsung M393B2G70BH0-CK0 16GB vs Crucial Technology CT8G4SFS8213.M8FA 8GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
Crucial Technology CT8G4SFS8213.M8FA 8GB

Crucial Technology CT8G4SFS8213.M8FA 8GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
Crucial Technology CT8G4SFS8213.M8FA 8GB 需要考虑的原因
Crucial Technology CT8G4SFS8213.M8FA 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 54
    左右 -100% 更低的延时
  • 更快的读取速度，GB/s
    14.6 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.7 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT8G4SFS8213.M8FA 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 27
  • 读取速度，GB/s
    9.2 left arrow 14.6
  • 写入速度，GB/s
    8.1 left arrow 10.7
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 2432

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Crucial Technology CT8G4SFS8213.M8FA 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DQVE1908 512MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
A-DATA Technology AO1P32NC8T1-BCIS 8GB
A-DATA Technology AO1P32NC8T1-BCIS 8GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Crucial Technology CT8G4DFRA266.M4FE 8GB
Crucial Technology CT8G4DFRA266.M4FE 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Kingston KHX2400C14S4/4G 4GB
Kingston KHX2400C14S4/4G 4GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMK32GX4M4C3000C15 8GB
Corsair CMK32GX4M4C3000C15 8GB
内存RAM
Kingston 99U5429-014.A00LF 4GB
Kingston 99U5429-014.A00LF 4GB
Corsair CMK64GX4M4C3333C16 16GB
Corsair CMK64GX4M4C3333C16 16GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Hewlett-Packard 7EH61AA# 8GB
Hewlett-Packard 7EH61AA# 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CB8GU2666.C8ET 8GB
Crucial Technology CB8GU2666.C8ET 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Samsung V-GeN D4S8GL30A8TX5 8GB
Samsung V-GeN D4S8GL30A8TX5 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Kingston CBD24D4S7S8MB-8 8GB
Kingston CBD24D4S7S8MB-8 8GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Transcend Information JM2666HSB-16G 16GB
Transcend Information JM2666HSB-16G 16GB
内存RAM
SK Hynix HMT31GR7BFR4C-H9 8GB
SK Hynix HMT31GR7BFR4C-H9 8GB
G Skill Intl F4-2400C14-4GRK 4GB
G Skill Intl F4-2400C14-4GRK 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMK8GX4M2B4200C19 4GB
Corsair CMK8GX4M2B4200C19 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Apacer Technology 76.D305G.D390B 16GB
Apacer Technology 76.D305G.D390B 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
内存RAM