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Samsung M393B2G70BH0-CK0 16GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB

Samsung M393B2G70BH0-CK0 16GB vs Patriot Memory (PDP Systems) PSD416G26662S 16GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD416G26662S 16GB

Patriot Memory (PDP Systems) PSD416G26662S 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
Patriot Memory (PDP Systems) PSD416G26662S 16GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD416G26662S 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 54
    左右 -64% 更低的延时
  • 更快的读取速度，GB/s
    16.4 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.1 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 33
  • 读取速度，GB/s
    9.2 left arrow 16.4
  • 写入速度，GB/s
    8.1 left arrow 14.1
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 3214

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Patriot Memory (PDP Systems) PSD416G26662S 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Mushkin 99[2/7/4]192[F/T] 4GB
Mushkin 99[2/7/4]192[F/T] 4GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Ramaxel Technology RMSA3260MH78H8H-2666 8GB
Ramaxel Technology RMSA3260MH78H8H-2666 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Wilk Elektronik S.A. GR2133D464L15S/4G 4GB
Wilk Elektronik S.A. GR2133D464L15S/4G 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
King Tiger Technology Tigo-2133Mhz-8G 8GB
King Tiger Technology Tigo-2133Mhz-8G 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Samsung M471A2K43CB1-CRCR 16GB
Samsung M471A2K43CB1-CRCR 16GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
G Skill Intl F4-3466C18-8GSXW 8GB
G Skill Intl F4-3466C18-8GSXW 8GB
内存RAM
Protocol Engines Kingrock 800 2GB 2GB
Protocol Engines Kingrock 800 2GB 2GB
G Skill Intl F4-4266C16-8GTZR 8GB
G Skill Intl F4-4266C16-8GTZR 8GB
内存RAM
Kingston MSI16D3LS1MNG/8G 8GB
Kingston MSI16D3LS1MNG/8G 8GB
Zotac Technology Ltd OD48G32S816-ZHC 8GB
Zotac Technology Ltd OD48G32S816-ZHC 8GB
内存RAM
Kingston 99U5429-014.A00LF 4GB
Kingston 99U5429-014.A00LF 4GB
Crucial Technology BLE16G4D30AEEA.K16FB 16GB
Crucial Technology BLE16G4D30AEEA.K16FB 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Crucial Technology BL16G32C16U4BL.M16FE 16GB
Crucial Technology BL16G32C16U4BL.M16FE 16GB
内存RAM
Samsung M471B5773EB0-CK0 2GB
Samsung M471B5773EB0-CK0 2GB
Kingston KVR800D2S6/4G 4GB
Kingston KVR800D2S6/4G 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMT32GX4M2K4000C19 16GB
Corsair CMT32GX4M2K4000C19 16GB
内存RAM
Samsung M471B5773EB0-CK0 2GB
Samsung M471B5773EB0-CK0 2GB
Team Group Inc. DDR4 3600 8GB
Team Group Inc. DDR4 3600 8GB
内存RAM