Samsung M393B5170DZ1-CH9 4GB vs SK Hynix HYMP151F72CPD43-S6 4GB

总分

Samsung M393B5170DZ1-CH9 4GB

Samsung M393B5170DZ1-CH9 4GB

总分

SK Hynix HYMP151F72CPD43-S6 4GB

SK Hynix HYMP151F72CPD43-S6 4GB

差异规格评论

差异

Samsung M393B5170DZ1-CH9 4GB

需要考虑的原因
Samsung M393B5170DZ1-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 67

左右 54% 更低的延时
更快的读取速度，GB/s

9.5 3

测试中的平均数值
更快的写入速度，GB/s

9.0 2,240.3

测试中的平均数值
更高的内存带宽，mbps

10600 6400

左右 1.66% 更高的带宽

SK Hynix HYMP151F72CPD43-S6 4GB

需要考虑的原因
SK Hynix HYMP151F72CPD43-S6 4GB

报告一个错误

规格

完整的技术规格清单

Samsung M393B5170DZ1-CH9 4GB

SK Hynix HYMP151F72CPD43-S6 4GB

主要特点

存储器类型

DDR3 DDR2
PassMark中的延时，ns

31 67
读取速度，GB/s

9.5 3,322.5
写入速度，GB/s

9.0 2,240.3
内存带宽，mbps

10600 6400

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度

7-7-7-20 / 1333 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

2080 652

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Kingston X74R9W-MIE 8GB

Kingston X74R9W-MIE 8GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Corsair CMN32GX4M2Z3600C18 16GB

Corsair CMN32GX4M2Z3600C18 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

G Skill Intl F4-3000C15-8GRBB 8GB

G Skill Intl F4-3000C15-8GRBB 8GB

Nanya Technology M2X4G64CB88CHN-DG 4GB

Nanya Technology M2X4G64CB88CHN-DG 4GB

Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Micron Technology 8ATF1G64HZ-2G6J1 8GB

Micron Technology 8ATF1G64HZ-2G6J1 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Kingston KHX2400C15D4/16GX 16GB

Kingston KHX2400C15D4/16GX 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-3600C19-8GSXWB 8GB

G Skill Intl F4-3600C19-8GSXWB 8GB

Kingston SNY1600S11-4G-EDEG 4GB

Kingston SNY1600S11-4G-EDEG 4GB

Kingston KHX21334D4/8G 8GB

Kingston KHX21334D4/8G 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Patriot Memory (PDP Systems) PSD48G213381S 8GB

Patriot Memory (PDP Systems) PSD48G213381S 8GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Samsung M378A2K43EB1-CWE 16GB

Samsung M378A2K43EB1-CWE 16GB

Crucial Technology 16G4UD2400.C16BD1 16GB

Crucial Technology 16G4UD2400.C16BD1 16GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Kingston KYXC0V-MIB 16GB

Kingston KYXC0V-MIB 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Crucial Technology CT8G4DFRA266.M4FE 8GB

Crucial Technology CT8G4DFRA266.M4FE 8GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Apacer Technology 78.C1GMM.DFW0C 8GB

Apacer Technology 78.C1GMM.DFW0C 8GB