Samsung M393B5170EH1-CH9 4GB vs Transcend Information TS2GLH64V6B 16GB

总分

Samsung M393B5170EH1-CH9 4GB

Samsung M393B5170EH1-CH9 4GB

总分

Transcend Information TS2GLH64V6B 16GB

Transcend Information TS2GLH64V6B 16GB

差异规格评论

差异

Samsung M393B5170EH1-CH9 4GB

需要考虑的原因
Samsung M393B5170EH1-CH9 4GB

报告一个错误

Transcend Information TS2GLH64V6B 16GB

需要考虑的原因
Transcend Information TS2GLH64V6B 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 51

左右 -132% 更低的延时
更快的读取速度，GB/s

17.9 10.2

测试中的平均数值
更快的写入速度，GB/s

14.5 7.6

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170EH1-CH9 4GB

Transcend Information TS2GLH64V6B 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 22
读取速度，GB/s

10.2 17.9
写入速度，GB/s

7.6 14.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2049 3411

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B5170EH1-CH9 4GB

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Corsair CMH16GX4M2Z3200C16 8GB

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Kingston 99U5584-001.A00LF 4GB

SK Hynix HMA41GR7AFR4N-TF 8GB

SK Hynix HMA41GR7AFR4N-TF 8GB

Corsair CMX4GX3M1A1333C9 4GB

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Crucial Technology BLS8G4S240FSD.M16FAD 8GB

Crucial Technology BLS8G4S240FSD.M16FAD 8GB