Samsung M393B5170FH0-CK0 4GB vs Corsair CMT32GX4M2C3000C15 16GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Corsair CMT32GX4M2C3000C15 16GB

Corsair CMT32GX4M2C3000C15 16GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时

Corsair CMT32GX4M2C3000C15 16GB

需要考虑的原因
Corsair CMT32GX4M2C3000C15 16GB

报告一个错误

更快的读取速度，GB/s

17.4 11.8

测试中的平均数值
更快的写入速度，GB/s

14.9 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Corsair CMT32GX4M2C3000C15 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

11.8 17.4
写入速度，GB/s

7.3 14.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2057 3621

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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SK Hynix HMT151R7TFR4C-H9 4GB

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Mushkin MRB4U300GJJM16G 16GB

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PNY Electronics PNY 2GB

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SK Hynix HMAA4GU6MJR8N-VK 32GB

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Samsung M395T2863QZ4-CF76 1GB

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Netac Technology Co Ltd EKBLUE4162417AD 8GB

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Kingston ACR512X64D3S13C9G 4GB

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Corsair CMK16GX4M2A2133C13 8GB

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Kingston 99U5584-004.A00LF 4GB

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Samsung M3 93T5750CZA-CE6 2GB

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G Skill Intl F4-2666C18-32GTZN 32GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Corsair CMK32GX4M4B3600C18 8GB

Corsair CMK32GX4M4B3600C18 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Crucial Technology CT51264BA160BJ.C8F 4GB

Crucial Technology CT51264BA160BJ.C8F 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology BLS16G4D240FSB.16FD 16GB

Crucial Technology BLS16G4D240FSB.16FD 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Apacer Technology GD2.0918CT.001 4GB

Apacer Technology GD2.0918CT.001 4GB