Samsung M395T2863QZ4-CF76 1GB vs G Skill Intl F4-3333C16-8GTZB 8GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

G Skill Intl F4-3333C16-8GTZB 8GB

G Skill Intl F4-3333C16-8GTZB 8GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 18.7

测试中的平均数值
更快的写入速度，GB/s

2,404.5 14.1

测试中的平均数值

G Skill Intl F4-3333C16-8GTZB 8GB

需要考虑的原因
G Skill Intl F4-3333C16-8GTZB 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 104

左右 -395% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-3333C16-8GTZB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 21
读取速度，GB/s

3,192.0 18.7
写入速度，GB/s

2,404.5 14.1
内存带宽，mbps

6400 17000

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

786 3380

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HYMP112U64CP8-S5 1GB

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Crucial Technology BLE8G4D26AFEA.16FAD 8GB

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A-DATA Technology ADOVE1A0834E 1GB

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Kingston CBD24D4S7D8MB-16 16GB

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Kingston KF2666C16S4/16G 16GB

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Samsung M395T2863QZ4-CF76 1GB

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G Skill Intl F4-3333C16-8GTZB 8GB

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A-DATA Technology DQKD1A08 1GB

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Crucial Technology BL16G30C15U4B.16FE 16GB

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Elpida EBJ21UE8BDF0-DJ-F 2GB

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Kingston 9905702-010.A00G 8GB

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Micron Technology 8ATF51264AZ-2G1B1 4GB

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Kllisre D4 8G 8GB

Kllisre D4 8G 8GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

G Skill Intl F4-2400C15-16GTZR 16GB

G Skill Intl F4-2400C15-16GTZR 16GB

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

JUHOR JHD3000U1908JG 8GB

JUHOR JHD3000U1908JG 8GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Kingston ASU21D4U5S8MB-8 8GB

Kingston ASU21D4U5S8MB-8 8GB

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Teikon TMA81GS6AFR8N-UHSC 8GB

Teikon TMA81GS6AFR8N-UHSC 8GB