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Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3600C18-8GVK 8GB

Samsung M395T2863QZ4-CF76 1GB vs G Skill Intl F4-3600C18-8GVK 8GB

总分
star star star star star
Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分
star star star star star
G Skill Intl F4-3600C18-8GVK 8GB

G Skill Intl F4-3600C18-8GVK 8GB

差异 规格 评论

差异

Samsung M395T2863QZ4-CF76 1GB 需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,404.5 left arrow 14.9
    测试中的平均数值
G Skill Intl F4-3600C18-8GVK 8GB 需要考虑的原因
G Skill Intl F4-3600C18-8GVK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 104
    左右 -235% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3600C18-8GVK 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    104 left arrow 31
  • 读取速度，GB/s
    3,192.0 left arrow 18.3
  • 写入速度，GB/s
    2,404.5 left arrow 14.9
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    no data left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    786 left arrow 3414

Samsung M395T2863QZ4-CF76 1GB RAM的比较

takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB

G Skill Intl F4-3600C18-8GVK 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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TwinMOS 8DHE3MN8-HATP 2GB
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内存RAM
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Samsung M471B5173QH0-YK0 4GB
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内存RAM
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Kingston 99U5702-020.A00G 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
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内存RAM
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SK Hynix HMT351S6CFR8C-PB 4GB
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Patriot Memory (PDP Systems) 4400 C18 Series 8GB
内存RAM
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Samsung M393B2G70BH0-CH9 16GB
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Kingston KM0VW4-MID 8GB
内存RAM