Samsung M4 70T2864QZ3-CF7 1GB vs G Skill Intl F4-3200C16-8GSXWB 8GB

总分

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分

G Skill Intl F4-3200C16-8GSXWB 8GB

G Skill Intl F4-3200C16-8GSXWB 8GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CF7 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 18

测试中的平均数值
更快的写入速度，GB/s

2,201.1 13.5

测试中的平均数值

G Skill Intl F4-3200C16-8GSXWB 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GSXWB 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 74

左右 -174% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CF7 1GB

G Skill Intl F4-3200C16-8GSXWB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

74 27
读取速度，GB/s

4,178.4 18.0
写入速度，GB/s

2,201.1 13.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

508 3293

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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G Skill Intl F4-3200C16-8GSXWB 8GB

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AMD AE34G1601U1 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Crucial Technology BLS8G4D240FSC.16FBR2 8GB

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Avant Technology W6451U66J7240ND 4GB

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Crucial Technology CT2K102464BD160B 8GB

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AMD R7416G2400U2S 16GB

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Corsair CMW32GX4M4Z2933C16 8GB

Corsair CMW32GX4M4Z2933C16 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston HP32D4U8S8HD-8X 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB

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Samsung M393B5170FH0-CK0 4GB

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Smart Modular SF464128CKHIWDFSEG 4GB

Smart Modular SF464128CKHIWDFSEG 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

Essencore Limited KD4AGU880-36A180C 16GB

Essencore Limited KD4AGU880-36A180C 16GB