Samsung M4 70T2864QZ3-CF7 1GB vs Kingston 9905744-077.A00G 16GB

总分

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分

Kingston 9905744-077.A00G 16GB

Kingston 9905744-077.A00G 16GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CF7 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 15.6

测试中的平均数值
更快的写入速度，GB/s

2,201.1 11.2

测试中的平均数值

Kingston 9905744-077.A00G 16GB

需要考虑的原因
Kingston 9905744-077.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

41 74

左右 -80% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CF7 1GB

Kingston 9905744-077.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

74 41
读取速度，GB/s

4,178.4 15.6
写入速度，GB/s

2,201.1 11.2
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

508 2685

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AO1P24HC4R1-BUYS 4GB

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Kingston KHX318C10FR/8G 8GB

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InnoDisk Corporation M4C0-AGS1TCSJ 16GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Corsair CMG32GX4M2E3200C16 16GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

Kingston 9905678-012.A00G 8GB

Kingston 9905678-012.A00G 8GB