RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M4 70T2864QZ3-CF7 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Samsung M4 70T2864QZ3-CF7 1GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

总分
star star star star star
Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

差异 规格 评论

差异

Samsung M4 70T2864QZ3-CF7 1GB 需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,201.1 left arrow 13.0
    测试中的平均数值
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB 需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 74
    左右 -222% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T2864QZ3-CF7 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    74 left arrow 23
  • 读取速度，GB/s
    4,178.4 left arrow 17.2
  • 写入速度，GB/s
    2,201.1 left arrow 13.0
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    508 left arrow 3004

Samsung M4 70T2864QZ3-CF7 1GB RAM的比较

Samsung M4 70T2864QZ3-CE6 1GB
Corsair CMD8GX4M2B4000C19 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston KHX2400C14/16G 16GB
Kingston KHX2400C14/16G 16GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Avant Technology J642GU42J5213NF 16GB
Avant Technology J642GU42J5213NF 16GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Panram International Corporation M424016 4GB
Panram International Corporation M424016 4GB
内存RAM
Crucial Technology CT2K102464BD160B 8GB
Crucial Technology CT2K102464BD160B 8GB
A-DATA Technology AE4S240038G17-BHYA 8GB
A-DATA Technology AE4S240038G17-BHYA 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMD64GX4M4C3000C15 16GB
Corsair CMD64GX4M4C3000C15 16GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
DSL Memory D4SH1G081SH26A-C 8GB
DSL Memory D4SH1G081SH26A-C 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT8G4SFS8213.M8FA 8GB
Crucial Technology CT8G4SFS8213.M8FA 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3200C16-16GSXKB 16GB
G Skill Intl F4-3200C16-16GSXKB 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-3200C14-8GTZSK 8GB
G Skill Intl F4-3200C14-8GTZSK 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CM4X8GF2400Z16K4 8GB
Corsair CM4X8GF2400Z16K4 8GB
内存RAM
SK Hynix HMT42GR7AFR4C-RD 16GB
SK Hynix HMT42GR7AFR4C-RD 16GB
Smart Modular SF464128CKHI6DFSEG 4GB
Smart Modular SF464128CKHI6DFSEG 4GB
内存RAM
Crucial Technology CT2K102464BD160B 8GB
Crucial Technology CT2K102464BD160B 8GB
Kingston 9905744-006.A00G 16GB
Kingston 9905744-006.A00G 16GB
内存RAM