RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T5663QZ3-CE6 2GB
Crucial Technology CT4G4SFS824A.C8FE 4GB
比较
Samsung M4 70T5663QZ3-CE6 2GB vs Crucial Technology CT4G4SFS824A.C8FE 4GB
总分
Samsung M4 70T5663QZ3-CE6 2GB
总分
Crucial Technology CT4G4SFS824A.C8FE 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M4 70T5663QZ3-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
14.7
测试中的平均数值
需要考虑的原因
Crucial Technology CT4G4SFS824A.C8FE 4GB
报告一个错误
低于PassMark测试中的延时,ns
28
68
左右 -143% 更低的延时
更快的写入速度,GB/s
7.0
1,702.6
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Samsung M4 70T5663QZ3-CE6 2GB
Crucial Technology CT4G4SFS824A.C8FE 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
68
28
读取速度,GB/s
3,886.6
14.7
写入速度,GB/s
1,702.6
7.0
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
654
1728
Samsung M4 70T5663QZ3-CE6 2GB RAM的比较
SK Hynix HYMP125U64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Crucial Technology CT4G4SFS824A.C8FE 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5673FH0-CF8 2GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
King Tiger Technology Tigo-2400MHz-8G 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Crucial Technology BL32G36C16U4B.M16FB1 32GB
A-DATA Technology DQKD1A08 1GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
Samsung M471B1G73DB0-YK0 8GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
AMD R534G1601U1S-UO 4GB
Apacer Technology 78.CAGR9.40C0B 8GB
Samsung M393B1G70BH0-YK0 8GB
Ramaxel Technology RMUA5180ME78HBF-2666 16GB
Samsung M3 78T5663RZ3-CF7 2GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
HT Micron HTH5AN8G8NCJR-VKD 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 9905734-062.A00G 32GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMK32GX4M2Z2400C16 16GB
Kingston 9965516-430.A00G 16GB
Corsair CMD32GX4M4B3000C15 8GB
Samsung M378A1G43DB0-CPB 8GB
G Skill Intl F4-2666C15-8GVS 8GB
报告一个错误
×
Bug description
Source link