Samsung M4 70T5663QZ3-CF7 2GB vs Kingmax Semiconductor KLDE88F-B8HS5 2GB

总分

Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

总分

Kingmax Semiconductor KLDE88F-B8HS5 2GB

Kingmax Semiconductor KLDE88F-B8HS5 2GB

差异规格评论

差异

Samsung M4 70T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M4 70T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 4

测试中的平均数值

Kingmax Semiconductor KLDE88F-B8HS5 2GB

需要考虑的原因
Kingmax Semiconductor KLDE88F-B8HS5 2GB

报告一个错误

低于PassMark测试中的延时，ns

54 64

左右 -19% 更低的延时
更快的写入速度，GB/s

2,275.0 1,869.1

测试中的平均数值

规格

完整的技术规格清单

Samsung M4 70T5663QZ3-CF7 2GB

Kingmax Semiconductor KLDE88F-B8HS5 2GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

64 54
读取速度，GB/s

4,477.7 4,390.6
写入速度，GB/s

1,869.1 2,275.0
内存带宽，mbps

6400 6400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

697 669

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-1333C9-4GIS 4GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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V-GEN D4H16GS24A8 16GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

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