Samsung M471B5673FH0-CF8 2GB vs Mushkin 99[2/7/4]190F 4GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Mushkin 99[2/7/4]190F 4GB

Mushkin 99[2/7/4]190F 4GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

Mushkin 99[2/7/4]190F 4GB

需要考虑的原因
Mushkin 99[2/7/4]190F 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 30

左右 -15% 更低的延时
更快的读取速度，GB/s

14.1 10.6

测试中的平均数值
更快的写入速度，GB/s

10.7 6.8

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Mushkin 99[2/7/4]190F 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 26
读取速度，GB/s

10.6 14.1
写入速度，GB/s

6.8 10.7
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1479 2679

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD10240

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston 9905403-003.B00LF 4GB

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Corsair CMW128GX4M8C3000C16 16GB

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Crucial Technology CT16G4SFS832A.C8FE 16GB

Crucial Technology CT16G4SFS832A.C8FE 16GB

Hexon Technology Pte Ltd HEXON 1GB

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SK Hynix HMA451R7MFR8N-TFTD 4GB

SK Hynix HMA451R7MFR8N-TFTD 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Crucial Technology CT8G4DFS832A.M8FJ 8GB

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Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB