SK Hynix DMT351E6CFR8C-H9 4GB vs Samsung DDR3 8GB 1600MHz 8GB

总分

SK Hynix DMT351E6CFR8C-H9 4GB

SK Hynix DMT351E6CFR8C-H9 4GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

差异规格评论

差异

SK Hynix DMT351E6CFR8C-H9 4GB

需要考虑的原因
SK Hynix DMT351E6CFR8C-H9 4GB

报告一个错误

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

低于PassMark测试中的延时，ns

43 69

左右 -60% 更低的延时
更快的读取速度，GB/s

14.9 6

测试中的平均数值
更快的写入速度，GB/s

9.6 2.9

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

SK Hynix DMT351E6CFR8C-H9 4GB

Samsung DDR3 8GB 1600MHz 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

69 43
读取速度，GB/s

6.0 14.9
写入速度，GB/s

2.9 9.6
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

844 2506

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK8GX4M1Z3200C16 8GB