SK Hynix HMT31GR7BFR4C-H9 8GB vs Samsung M471A2K43EB1-CTD 16GB

总分

SK Hynix HMT31GR7BFR4C-H9 8GB

SK Hynix HMT31GR7BFR4C-H9 8GB

总分

Samsung M471A2K43EB1-CTD 16GB

Samsung M471A2K43EB1-CTD 16GB

差异规格评论

差异

SK Hynix HMT31GR7BFR4C-H9 8GB

需要考虑的原因
SK Hynix HMT31GR7BFR4C-H9 8GB

报告一个错误

Samsung M471A2K43EB1-CTD 16GB

需要考虑的原因
Samsung M471A2K43EB1-CTD 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 58

左右 -71% 更低的延时
更快的读取速度，GB/s

15.3 8.2

测试中的平均数值
更快的写入速度，GB/s

11.7 6.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT31GR7BFR4C-H9 8GB

Samsung M471A2K43EB1-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

58 34
读取速度，GB/s

8.2 15.3
写入速度，GB/s

6.4 11.7
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1718 2962

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Kingston KF2666C16D4/8G 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Samsung M378A1G43EB1-CPB 8GB

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Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Kingston 9965525-155.A00LF 8GB

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Corsair CMR16GX4M2A2666C16 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB