SK Hynix HMT325S6BFR8C-H9 2GB vs Samsung M471B5273BH1-CF8 4GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Samsung M471B5273BH1-CF8 4GB

Samsung M471B5273BH1-CF8 4GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

更快的读取速度，GB/s

11.6 7.6

测试中的平均数值
更快的写入速度，GB/s

7.3 6.6

测试中的平均数值
更高的内存带宽，mbps

10600 8500

左右 1.25% 更高的带宽

Samsung M471B5273BH1-CF8 4GB

需要考虑的原因
Samsung M471B5273BH1-CF8 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 41

左右 -14% 更低的延时

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Samsung M471B5273BH1-CF8 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

41 36
读取速度，GB/s

11.6 7.6
写入速度，GB/s

7.3 6.6
内存带宽，mbps

10600 8500

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC3-8500, 1.5V, CAS Supported: 6 7 8
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1066 MHz
排名PassMark (越多越好)

1438 867

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2133C15-4GFX 4GB

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Kingston 99U5584-004.A00LF 4GB

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Corsair CMK32GX4M4D3200C16 8GB

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Kingston 99U5474-028.A00LF 4GB

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Crucial Technology CT16G4DFD8213.M16FB 16GB

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V-GEN D4H4GL26A8TS5 4GB

V-GEN D4H4GL26A8TS5 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMSX32GX4M2A2400C16 16GB

Corsair CMSX32GX4M2A2400C16 16GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

SK Hynix HMA425S6BJR6N-UH 2GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Kingston K821PJ-MIB 16GB

Kingston K821PJ-MIB 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology BLS8G4D30AESEK.M8FE1 8GB

Crucial Technology BLS8G4D30AESEK.M8FE1 8GB