takeMS International AG TMS2GB264D083805EV 2GB vs Micron Technology 8ATF1G64HZ-3G2J1 8GB

总分

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分

Micron Technology 8ATF1G64HZ-3G2J1 8GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D083805EV 2GB

需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB

报告一个错误

更快的读取速度，GB/s

3 15.6

测试中的平均数值

Micron Technology 8ATF1G64HZ-3G2J1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-3G2J1 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 50

左右 -47% 更低的延时
更快的写入速度，GB/s

11.9 1,457.4

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D083805EV 2GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 34
读取速度，GB/s

3,757.3 15.6
写入速度，GB/s

1,457.4 11.9
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

557 2812

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Elpida EBJ40UG8BBU0-GN-F 4GB

Elpida EBJ40UG8BBU0-GN-F 4GB

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Corsair CM4B8G2J2666A15D 8GB

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G Skill Intl F4-4000C14-16GTZR 16GB

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Crucial Technology BL16G36C16U4B.M16FE1 16GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

Micron Technology CT4G4DFS8213.8FA11 4GB

Micron Technology CT4G4DFS8213.8FA11 4GB