takeMS International AG TMS2GB264D083805EV 2GB vs Samsung M378A1G43EB1-CPB 8GB

总分

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分

Samsung M378A1G43EB1-CPB 8GB

Samsung M378A1G43EB1-CPB 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D083805EV 2GB

需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB

报告一个错误

更快的读取速度，GB/s

3 15.4

测试中的平均数值

Samsung M378A1G43EB1-CPB 8GB

需要考虑的原因
Samsung M378A1G43EB1-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 50

左右 -47% 更低的延时
更快的写入速度，GB/s

11.5 1,457.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D083805EV 2GB

Samsung M378A1G43EB1-CPB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 34
读取速度，GB/s

3,757.3 15.4
写入速度，GB/s

1,457.4 11.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

557 2763

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Ramaxel Technology RMT1970ED48E8F1066 2GB

Ramaxel Technology RMT1970ED48E8F1066 2GB

Ramaxel Technology RMSA3260MH78H8H-2666 8GB

Ramaxel Technology RMSA3260MH78H8H-2666 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Crucial Technology CT16G4SFS8266.C8FB 16GB

Crucial Technology CT16G4SFS8266.C8FB 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Kingston 9965589-030.D01G 8GB

Kingston 9965589-030.D01G 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-2400C15-8GRR 8GB

G Skill Intl F4-2400C15-8GRR 8GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Netac Technology Co Ltd EKBLUE4162417AD 8GB

Netac Technology Co Ltd EKBLUE4162417AD 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Samsung M378A1G43EB1-CPB 8GB

Samsung M378A1G43EB1-CPB 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

SK Hynix HMAA4GU6AJR8N-VK 32GB

SK Hynix HMAA4GU6AJR8N-VK 32GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

G Skill Intl F4-3400C16-8GVK 8GB

G Skill Intl F4-3400C16-8GVK 8GB

A-DATA Technology AM1L16BC2P1-B1FS 2GB

A-DATA Technology AM1L16BC2P1-B1FS 2GB

G Skill Intl F4-3000C15-4GTZ 4GB

G Skill Intl F4-3000C15-4GTZ 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMT64GX4M8C3200C16 8GB

Corsair CMT64GX4M8C3200C16 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Micron Technology V-GeN D4V16GL24A8R 16GB

Micron Technology V-GeN D4V16GL24A8R 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Samsung M391A2K43BB1-CTD 16GB

Samsung M391A2K43BB1-CTD 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Apacer Technology GD2.1527WT.001 8GB

Apacer Technology GD2.1527WT.001 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB