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takeMS International AG TMS2GB264D083805EV 2GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
比较
takeMS International AG TMS2GB264D083805EV 2GB vs Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
总分
takeMS International AG TMS2GB264D083805EV 2GB
总分
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
更快的读取速度,GB/s
3
17.8
测试中的平均数值
需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
50
左右 -72% 更低的延时
更快的写入速度,GB/s
14.1
1,457.4
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
50
29
读取速度,GB/s
3,757.3
17.8
写入速度,GB/s
1,457.4
14.1
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
557
3434
takeMS International AG TMS2GB264D083805EV 2GB RAM的比较
Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
Kingston 9905458-017.A01LF 4GB
Kingston 9905713-019.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
Kingston 99U5471-056.A00LF 8GB
Team Group Inc. TEAMGROUP-UD4-3866 8GB
Kingston KTC1G-UDIMM 1GB
G Skill Intl F4-3000C15-4GTZ 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Samsung M378A1G44AB0-CWE 8GB
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston HX432C15PB3/16G 16GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
G Skill Intl F4-4400C19-8GTZSW 8GB
Samsung M393B1K70CH0-CH9 8GB
Dust Leopard DDR4-2400 C17 4GB 4GB
Kingston 9965525-018.A00LF 4GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS4G4D240FSA.8FARG 4GB
Kingston 9905403-134.A00LF 2GB
Samsung M378A5143EB1-CPB 4GB
A-DATA Technology ADOVE1A0834E 1GB
UMAX Technology D4-2400-4GB-512X8-L 4GB
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报告一个错误
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Bug description
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