takeMS International AG TMS2GB264D083805EV 2GB

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

takeMS International AG TMS2GB264D083805EV 2GB vs Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

总分

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D083805EV 2GB

需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB

报告一个错误

更快的读取速度，GB/s

3 17.8

测试中的平均数值

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 50

左右 -72% 更低的延时
更快的写入速度，GB/s

14.1 1,457.4

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D083805EV 2GB

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 29
读取速度，GB/s

3,757.3 17.8
写入速度，GB/s

1,457.4 14.1
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

557 3434

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

G Skill Intl F4-4133C19-8GTZKWC 8GB

G Skill Intl F4-4133C19-8GTZKWC 8GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905713-019.A00G 4GB

Kingston 9905713-019.A00G 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB

Kingston 99U5471-056.A00LF 8GB

Kingston 99U5471-056.A00LF 8GB

Team Group Inc. TEAMGROUP-UD4-3866 8GB

Team Group Inc. TEAMGROUP-UD4-3866 8GB

Kingston KTC1G-UDIMM 1GB

Kingston KTC1G-UDIMM 1GB

G Skill Intl F4-3000C15-4GTZ 4GB

G Skill Intl F4-3000C15-4GTZ 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

Kingston HX432C15PB3/16G 16GB

Kingston HX432C15PB3/16G 16GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

G Skill Intl F4-4400C19-8GTZSW 8GB

G Skill Intl F4-4400C19-8GTZSW 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Dust Leopard DDR4-2400 C17 4GB 4GB

Dust Leopard DDR4-2400 C17 4GB 4GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Micron Technology 4ATF51264HZ-2G3E2 4GB

Micron Technology 4ATF51264HZ-2G3E2 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS4G4D240FSA.8FARG 4GB

Crucial Technology BLS4G4D240FSA.8FARG 4GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

Samsung M378A5143EB1-CPB 4GB

Samsung M378A5143EB1-CPB 4GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

UMAX Technology D4-2400-4GB-512X8-L 4GB

UMAX Technology D4-2400-4GB-512X8-L 4GB