RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Corsair CMSX4GX3M1A1600C9 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Compare
Corsair CMSX4GX3M1A1600C9 4GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Overall score
Corsair CMSX4GX3M1A1600C9 4GB
Overall score
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Corsair CMSX4GX3M1A1600C9 4GB
Report a bug
Below the latency in the PassMark tests, ns
38
71
Around 46% lower latency
Faster write speed, GB/s
9.1
6.4
Average value in the tests
Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
Faster reading speed, GB/s
15.6
12.8
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Corsair CMSX4GX3M1A1600C9 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
38
71
Read speed, GB/s
12.8
15.6
Write speed, GB/s
9.1
6.4
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2099
1650
Corsair CMSX4GX3M1A1600C9 4GB RAM comparisons
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471B5273DH0-CH9 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
Corsair CMSX4GX3M1A1600C9 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
A-DATA Technology DDR2 800G 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
SK Hynix HMA82GU6JJR8N-VK 16GB
SK Hynix HMT351S6CFR8C-PB 4GB
Teikon TMA851U6CJR6N-VKSC 4GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology BLS16G4D26BFSB.16FD 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BL16G32C16U4W.16FE 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Samsung M378A1K43BB1-CTD 16GB
Kingston 9965516-049.A00LF 8GB
Apacer Technology 78.B1GN3.AZ32B 4GB
Samsung 1600 CL10 Series 8GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
Kingston 99U5428-018.A00LF 8GB
G Skill Intl F4-2133C15-16GIS 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT8G4DFD8213.C16FDR2 8GB
Report a bug
×
Bug description
Source link