Corsair CMSX4GX3M1A1600C9 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Corsair CMSX4GX3M1A1600C9 4GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Overall score
star star star star star
Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

Overall score
star star star star star
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Differences

  • Below the latency in the PassMark tests, ns
    38 left arrow 71
    Around 46% lower latency
  • Faster write speed, GB/s
    9.1 left arrow 6.4
    Average value in the tests
  • Faster reading speed, GB/s
    15.6 left arrow 12.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Corsair CMSX4GX3M1A1600C9 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    38 left arrow 71
  • Read speed, GB/s
    12.8 left arrow 15.6
  • Write speed, GB/s
    9.1 left arrow 6.4
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2099 left arrow 1650
RAM Latency Calculator
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