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Corsair CMSX4GX3M1A1600C9 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Compare
Corsair CMSX4GX3M1A1600C9 4GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Overall score
Corsair CMSX4GX3M1A1600C9 4GB
Overall score
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Corsair CMSX4GX3M1A1600C9 4GB
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Below the latency in the PassMark tests, ns
38
71
Around 46% lower latency
Faster write speed, GB/s
9.1
6.4
Average value in the tests
Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
Faster reading speed, GB/s
15.6
12.8
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Corsair CMSX4GX3M1A1600C9 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
38
71
Read speed, GB/s
12.8
15.6
Write speed, GB/s
9.1
6.4
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2099
1650
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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