Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB
Samsung M471B1G73BH0-CH9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB vs Samsung M471B1G73BH0-CH9 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB

Overall score
star star star star star
Samsung M471B1G73BH0-CH9 8GB

Samsung M471B1G73BH0-CH9 8GB

Differences

  • Faster reading speed, GB/s
    12 left arrow 10.8
    Average value in the tests
  • Faster write speed, GB/s
    8.1 left arrow 6.5
    Average value in the tests

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB
Samsung M471B1G73BH0-CH9 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    29 left arrow 29
  • Read speed, GB/s
    12.0 left arrow 10.8
  • Write speed, GB/s
    8.1 left arrow 6.5
  • Memory bandwidth, mbps
    10600 left arrow 10600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    2171 left arrow 1953
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons