Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C-RD 8GB
Mushkin MRA4S300GJJM16G 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C-RD 8GB vs Mushkin MRA4S300GJJM16G 16GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C-RD 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C-RD 8GB

Overall score
star star star star star
Mushkin MRA4S300GJJM16G 16GB

Mushkin MRA4S300GJJM16G 16GB

Differences

  • Below the latency in the PassMark tests, ns
    30 left arrow 78
    Around 62% lower latency
  • Faster reading speed, GB/s
    12.1 left arrow 11.2
    Average value in the tests
  • Faster write speed, GB/s
    10.3 left arrow 8.7
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 14200
    Around 1.35 higher bandwidth

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C-RD 8GB
Mushkin MRA4S300GJJM16G 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    30 left arrow 78
  • Read speed, GB/s
    11.2 left arrow 12.1
  • Write speed, GB/s
    8.7 left arrow 10.3
  • Memory bandwidth, mbps
    14200 left arrow 19200
Other
  • Description
    PC3-14200, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    no data left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2458 left arrow 2113
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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