Kingston 9905316-106.A02LF 1GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Kingston 9905316-106.A02LF 1GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Overall score
star star star star star
Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Differences

  • Faster reading speed, GB/s
    4 left arrow 14.6
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    25 left arrow 56
    Around -124% lower latency
  • Faster write speed, GB/s
    9.9 left arrow 2,475.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 8800
    Around 2.18 higher bandwidth

Specifications

Complete list of technical specifications
Kingston 9905316-106.A02LF 1GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    56 left arrow 25
  • Read speed, GB/s
    4,878.3 left arrow 14.6
  • Write speed, GB/s
    2,475.5 left arrow 9.9
  • Memory bandwidth, mbps
    8800 left arrow 19200
Other
  • Description
    PC2-8800, SSTL 1.8V, CAS Supported: 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    no data left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    598 left arrow 2427
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons