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Micron Technology 8ATF51264AZ-2G1B1 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Compare
Micron Technology 8ATF51264AZ-2G1B1 4GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Overall score
Micron Technology 8ATF51264AZ-2G1B1 4GB
Overall score
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF51264AZ-2G1B1 4GB
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Below the latency in the PassMark tests, ns
29
73
Around 60% lower latency
Faster reading speed, GB/s
15.8
15.1
Average value in the tests
Faster write speed, GB/s
11.8
7.9
Average value in the tests
Reasons to consider
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Report a bug
Higher memory bandwidth, mbps
19200
17000
Around 1.13 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 8ATF51264AZ-2G1B1 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
29
73
Read speed, GB/s
15.8
15.1
Write speed, GB/s
11.8
7.9
Memory bandwidth, mbps
17000
19200
Other
Description
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2711
1724
Micron Technology 8ATF51264AZ-2G1B1 4GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
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Absolute Latency
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