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Micron Technology 8KTF25664HZ-1G4M1 2GB
Samsung M471B5773DH0-CH9 2GB
Compare
Micron Technology 8KTF25664HZ-1G4M1 2GB vs Samsung M471B5773DH0-CH9 2GB
Overall score
Micron Technology 8KTF25664HZ-1G4M1 2GB
Overall score
Samsung M471B5773DH0-CH9 2GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8KTF25664HZ-1G4M1 2GB
Report a bug
Below the latency in the PassMark tests, ns
41
43
Around 5% lower latency
Reasons to consider
Samsung M471B5773DH0-CH9 2GB
Report a bug
Faster reading speed, GB/s
11
10
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8KTF25664HZ-1G4M1 2GB
Samsung M471B5773DH0-CH9 2GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
41
43
Read speed, GB/s
10.0
11.0
Write speed, GB/s
7.2
7.2
Memory bandwidth, mbps
10600
10600
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
Timings / Clock speed
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)
1210
1393
Micron Technology 8KTF25664HZ-1G4M1 2GB RAM comparisons
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Samsung M471B5773DH0-CH9 2GB RAM comparisons
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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