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Nanya Technology NT1GT64UH8D0FN-AD 1GB
Korea Uhbele International Group Ltd. DDS3 1600K 4GB LV 4GB

Nanya Technology NT1GT64UH8D0FN-AD 1GB vs Korea Uhbele International Group Ltd. DDS3 1600K 4GB LV 4GB

Overall score
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Nanya Technology NT1GT64UH8D0FN-AD 1GB

Nanya Technology NT1GT64UH8D0FN-AD 1GB

Overall score
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Korea Uhbele International Group Ltd. DDS3 1600K 4GB LV 4GB

Korea Uhbele International Group Ltd. DDS3 1600K 4GB LV 4GB

Differences Specifications Comments

Differences

Nanya Technology NT1GT64UH8D0FN-AD 1GB Reasons to consider
Nanya Technology NT1GT64UH8D0FN-AD 1GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 12.5
    Average value in the tests
Korea Uhbele International Group Ltd. DDS3 1600K 4GB LV 4GB Reasons to consider
Korea Uhbele International Group Ltd. DDS3 1600K 4GB LV 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 66
    Around -154% lower latency
  • Faster write speed, GB/s
    10.6 left arrow 1,569.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    12800 left arrow 6400
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology NT1GT64UH8D0FN-AD 1GB
Korea Uhbele International Group Ltd. DDS3 1600K 4GB LV 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR3
  • Latency in PassMark, ns
    66 left arrow 26
  • Read speed, GB/s
    3,316.1 left arrow 12.5
  • Write speed, GB/s
    1,569.0 left arrow 10.6
  • Memory bandwidth, mbps
    6400 left arrow 12800
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    472 left arrow 2602

Nanya Technology NT1GT64UH8D0FN-AD 1GB RAM comparisons

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Korea Uhbele International Group Ltd. DDS3 1600K 4GB LV 4GB RAM comparisons

A-DATA Technology DDR3 1600 4GB
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