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Samsung M3 78T6553CZ3-CD5 512MB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Compare
Samsung M3 78T6553CZ3-CD5 512MB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Overall score
Samsung M3 78T6553CZ3-CD5 512MB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T6553CZ3-CD5 512MB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Report a bug
Below the latency in the PassMark tests, ns
37
56
Around -51% lower latency
Faster reading speed, GB/s
9.5
3
Average value in the tests
Faster write speed, GB/s
7.7
1,501.2
Average value in the tests
Higher memory bandwidth, mbps
17000
4200
Around 4.05 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T6553CZ3-CD5 512MB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
56
37
Read speed, GB/s
3,161.0
9.5
Write speed, GB/s
1,501.2
7.7
Memory bandwidth, mbps
4200
17000
Other
Description
PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
4-4-4-12 / 533 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
381
1949
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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