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Samsung M378B5173BH0-CH9 4GB
Inmos + 256MB
Compare
Samsung M378B5173BH0-CH9 4GB vs Inmos + 256MB
Overall score
Samsung M378B5173BH0-CH9 4GB
Overall score
Inmos + 256MB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5173BH0-CH9 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
30
Around 23% lower latency
Faster reading speed, GB/s
13.4
11.5
Average value in the tests
Reasons to consider
Inmos + 256MB
Report a bug
Faster write speed, GB/s
9.1
8.0
Average value in the tests
Higher memory bandwidth, mbps
16800
10600
Around 1.58 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5173BH0-CH9 4GB
Inmos + 256MB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
23
30
Read speed, GB/s
13.4
11.5
Write speed, GB/s
8.0
9.1
Memory bandwidth, mbps
10600
16800
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
no data
Ranking PassMark (The more the better)
2269
2318
Samsung M378B5173BH0-CH9 4GB RAM comparisons
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Inmos + 256MB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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