Samsung M378B5673FH0-CH9 2GB
SK Hynix HYMP125U64CP8-S6 2GB

Samsung M378B5673FH0-CH9 2GB vs SK Hynix HYMP125U64CP8-S6 2GB

Overall score
star star star star star
Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Overall score
star star star star star
SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Differences

  • Below the latency in the PassMark tests, ns
    35 left arrow 60
    Around 42% lower latency
  • Faster write speed, GB/s
    9.5 left arrow 2,381.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    10600 left arrow 6400
    Around 1.66% higher bandwidth
  • Faster reading speed, GB/s
    5 left arrow 14.4
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M378B5673FH0-CH9 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR2
  • Latency in PassMark, ns
    35 left arrow 60
  • Read speed, GB/s
    14.4 left arrow 5,082.2
  • Write speed, GB/s
    9.5 left arrow 2,381.6
  • Memory bandwidth, mbps
    10600 left arrow 6400
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 5-5-5-15 / 800 MHz
  • Ranking PassMark (The more the better)
    2321 left arrow 925
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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