Samsung M378B5673FH0-CH9 2GB vs SK Hynix HYMP125U64CP8-S6 2GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

35 60

左右 42% 更低的延时
更快的写入速度，GB/s

9.5 2,381.6

测试中的平均数值
更高的内存带宽，mbps

10600 6400

左右 1.66% 更高的带宽

SK Hynix HYMP125U64CP8-S6 2GB

需要考虑的原因
SK Hynix HYMP125U64CP8-S6 2GB

报告一个错误

更快的读取速度，GB/s

5 14.4

测试中的平均数值

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

SK Hynix HYMP125U64CP8-S6 2GB

主要特点

存储器类型

DDR3 DDR2
PassMark中的延时，ns

35 60
读取速度，GB/s

14.4 5,082.2
写入速度，GB/s

9.5 2,381.6
内存带宽，mbps

10600 6400

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度

7-7-7-20 / 1333 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

2321 925

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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