RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5673FH0-CH9 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Compare
Samsung M378B5673FH0-CH9 2GB vs SK Hynix HYMP125U64CP8-S6 2GB
Overall score
Samsung M378B5673FH0-CH9 2GB
Overall score
SK Hynix HYMP125U64CP8-S6 2GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673FH0-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
35
60
Around 42% lower latency
Faster write speed, GB/s
9.5
2,381.6
Average value in the tests
Higher memory bandwidth, mbps
10600
6400
Around 1.66% higher bandwidth
Reasons to consider
SK Hynix HYMP125U64CP8-S6 2GB
Report a bug
Faster reading speed, GB/s
5
14.4
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M378B5673FH0-CH9 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Main characteristics
Memory type
DDR3
DDR2
Latency in PassMark, ns
35
60
Read speed, GB/s
14.4
5,082.2
Write speed, GB/s
9.5
2,381.6
Memory bandwidth, mbps
10600
6400
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
Timings / Clock speed
7-7-7-20 / 1333 MHz
5-5-5-15 / 800 MHz
Ranking PassMark (The more the better)
2321
925
Samsung M378B5673FH0-CH9 2GB RAM comparisons
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
SK Hynix HYMP125U64CP8-S6 2GB RAM comparisons
A-DATA Technology DQKD1A08 1GB
Samsung M4 70T5663QZ3-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Corsair CMY8GX3M2A2666C10 4GB
Micron Technology 16ATF2G64AZ-2G1A1 16GB
Kingston HX318C10FK/4 4GB
Kingston 9965589-030.D01G 8GB
Kingston 99U5471-012.A00LF 4GB
G Skill Intl F4-2133C15-8GFT 8GB
Apacer Technology 78.01G86.9H50C 1GB
G Skill Intl F4-3200C15-16GTZKW 16GB
Kingston KVR533D2N4 512MB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMK32GX4M4K4266C19 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Kingston 9905584-016.A00LF 4GB
Micron Technology 36ASF2G72PZ-2G3B1 16GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston 9905711-038.A00G 8GB
Kingston KHX3200C18D4/8G 8GB
Crucial Technology CT16G4DFD8213.M16FB 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Samsung M393A2G40EB1-CRC 16GB
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMU32GX4M2A2666C16 16GB
Kingston 2GB-DDR2 800Mhz 2GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Kingston SMD4-S8G48HJ-26V 8GB
Report a bug
×
Bug description
Source link