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Samsung M393B5270CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT151R7TFR4C-H9 4GB

Samsung M393B5270CH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT151R7TFR4C-H9 4GB

Overall score
star star star star star
Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT151R7TFR4C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT151R7TFR4C-H9 4GB

Differences Specifications Comments

Differences

Samsung M393B5270CH0-CH9 4GB Reasons to consider
Samsung M393B5270CH0-CH9 4GB
Report a bug
  • Faster reading speed, GB/s
    10.6 left arrow 6.4
    Average value in the tests
Hynix Semiconductor (Hyundai Electronics) HMT151R7TFR4C-H9 4GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT151R7TFR4C-H9 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    31 left arrow 42
    Around -35% lower latency
  • Faster write speed, GB/s
    9.4 left arrow 9.0
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M393B5270CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT151R7TFR4C-H9 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    42 left arrow 31
  • Read speed, GB/s
    10.6 left arrow 6.4
  • Write speed, GB/s
    9.0 left arrow 9.4
  • Memory bandwidth, mbps
    10600 left arrow 10600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    2423 left arrow 1958

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RAM Latency Calculator
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