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Samsung M395T5160QZ4-CE66 2GB
SK Hynix HMA81GU6DJR8N-VK 8GB

Samsung M395T5160QZ4-CE66 2GB vs SK Hynix HMA81GU6DJR8N-VK 8GB

Overall score
star star star star star
Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

Overall score
star star star star star
SK Hynix HMA81GU6DJR8N-VK 8GB

SK Hynix HMA81GU6DJR8N-VK 8GB

Differences Specifications Comments

Differences

Samsung M395T5160QZ4-CE66 2GB Reasons to consider
Samsung M395T5160QZ4-CE66 2GB
Report a bug
  • Faster reading speed, GB/s
    2 left arrow 15.8
    Average value in the tests
  • Faster write speed, GB/s
    2,072.7 left arrow 12.5
    Average value in the tests
SK Hynix HMA81GU6DJR8N-VK 8GB Reasons to consider
SK Hynix HMA81GU6DJR8N-VK 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    35 left arrow 75
    Around -114% lower latency
  • Higher memory bandwidth, mbps
    21300 left arrow 5300
    Around 4.02 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M395T5160QZ4-CE66 2GB
SK Hynix HMA81GU6DJR8N-VK 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    75 left arrow 35
  • Read speed, GB/s
    2,730.3 left arrow 15.8
  • Write speed, GB/s
    2,072.7 left arrow 12.5
  • Memory bandwidth, mbps
    5300 left arrow 21300
Other
  • Description
    PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    no data left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    858 left arrow 2927

Samsung M395T5160QZ4-CE66 2GB RAM comparisons

Samsung M395T5160QZ4-CE65 2GB
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SK Hynix HMA81GU6DJR8N-VK 8GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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