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Samsung M4 70T2953EZ3-CE6 1GB
SK Hynix HMP112S6EFR6C-S6 1GB

Samsung M4 70T2953EZ3-CE6 1GB vs SK Hynix HMP112S6EFR6C-S6 1GB

Overall score
star star star star star
Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Overall score
star star star star star
SK Hynix HMP112S6EFR6C-S6 1GB

SK Hynix HMP112S6EFR6C-S6 1GB

Differences Specifications Comments

Differences

Samsung M4 70T2953EZ3-CE6 1GB Reasons to consider
Samsung M4 70T2953EZ3-CE6 1GB
Report a bug
  • Below the latency in the PassMark tests, ns
    73 left arrow 123
    Around 41% lower latency
SK Hynix HMP112S6EFR6C-S6 1GB Reasons to consider
SK Hynix HMP112S6EFR6C-S6 1GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 3
    Average value in the tests
  • Faster write speed, GB/s
    2,367.8 left arrow 1,423.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    6400 left arrow 5300
    Around 1.21 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M4 70T2953EZ3-CE6 1GB
SK Hynix HMP112S6EFR6C-S6 1GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR2
  • Latency in PassMark, ns
    73 left arrow 123
  • Read speed, GB/s
    3,510.5 left arrow 4,591.6
  • Write speed, GB/s
    1,423.3 left arrow 2,367.8
  • Memory bandwidth, mbps
    5300 left arrow 6400
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 5-5-5-15 / 800 MHz
  • Ranking PassMark (The more the better)
    476 left arrow 402

Samsung M4 70T2953EZ3-CE6 1GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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