Samsung M4 70T2953EZ3-CE6 1GB vs SK Hynix HMP112S6EFR6C-S6 1GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

SK Hynix HMP112S6EFR6C-S6 1GB

SK Hynix HMP112S6EFR6C-S6 1GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

低于PassMark测试中的延时，ns

73 123

左右 41% 更低的延时

SK Hynix HMP112S6EFR6C-S6 1GB

需要考虑的原因
SK Hynix HMP112S6EFR6C-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 3

测试中的平均数值
更快的写入速度，GB/s

2,367.8 1,423.3

测试中的平均数值
更高的内存带宽，mbps

6400 5300

左右 1.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

SK Hynix HMP112S6EFR6C-S6 1GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

73 123
读取速度，GB/s

3,510.5 4,591.6
写入速度，GB/s

1,423.3 2,367.8
内存带宽，mbps

5300 6400

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度

5-5-5-15 / 667 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

476 402

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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