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SK Hynix CT51264AC800.C16FC 4GB
Samsung M4 70T5267AZ3-CE6 4GB

SK Hynix CT51264AC800.C16FC 4GB vs Samsung M4 70T5267AZ3-CE6 4GB

Overall score
star star star star star
SK Hynix CT51264AC800.C16FC 4GB

SK Hynix CT51264AC800.C16FC 4GB

Overall score
star star star star star
Samsung M4 70T5267AZ3-CE6 4GB

Samsung M4 70T5267AZ3-CE6 4GB

Differences Specifications Comments

Differences

SK Hynix CT51264AC800.C16FC 4GB Reasons to consider
SK Hynix CT51264AC800.C16FC 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    52 left arrow 53
    Around 2% lower latency
  • Faster reading speed, GB/s
    4 left arrow 4
    Average value in the tests
  • Faster write speed, GB/s
    1,904.4 left arrow 1,810.7
    Average value in the tests
  • Higher memory bandwidth, mbps
    6400 left arrow 5300
    Around 1.21% higher bandwidth
Samsung M4 70T5267AZ3-CE6 4GB Reasons to consider
Samsung M4 70T5267AZ3-CE6 4GB
Report a bug

Specifications

Complete list of technical specifications
SK Hynix CT51264AC800.C16FC 4GB
Samsung M4 70T5267AZ3-CE6 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR2
  • Latency in PassMark, ns
    52 left arrow 53
  • Read speed, GB/s
    4,850.6 left arrow 4,479.6
  • Write speed, GB/s
    1,904.4 left arrow 1,810.7
  • Memory bandwidth, mbps
    6400 left arrow 5300
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 667 MHz
  • Ranking PassMark (The more the better)
    913 left arrow 786

SK Hynix CT51264AC800.C16FC 4GB RAM comparisons

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