SK Hynix HYMP112U64CP8-S6 1GB
Samsung M3 78T2953GZ3-CE6 1GB

SK Hynix HYMP112U64CP8-S6 1GB vs Samsung M3 78T2953GZ3-CE6 1GB

Overall score
star star star star star
SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Overall score
star star star star star
Samsung M3 78T2953GZ3-CE6 1GB

Samsung M3 78T2953GZ3-CE6 1GB

Differences

  • Below the latency in the PassMark tests, ns
    59 left arrow 70
    Around 16% lower latency
  • Faster reading speed, GB/s
    4 left arrow 3
    Average value in the tests
  • Faster write speed, GB/s
    2,076.1 left arrow 1,672.9
    Average value in the tests
  • Higher memory bandwidth, mbps
    6400 left arrow 5300
    Around 1.21% higher bandwidth

Specifications

Complete list of technical specifications
SK Hynix HYMP112U64CP8-S6 1GB
Samsung M3 78T2953GZ3-CE6 1GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR2
  • Latency in PassMark, ns
    59 left arrow 70
  • Read speed, GB/s
    4,723.5 left arrow 3,174.9
  • Write speed, GB/s
    2,076.1 left arrow 1,672.9
  • Memory bandwidth, mbps
    6400 left arrow 5300
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 667 MHz
  • Ranking PassMark (The more the better)
    741 left arrow 485
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons