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ASint Technology SSZ302G08-GGNHC 2GB
Samsung M471B5273DH0-CH9 4GB

ASint Technology SSZ302G08-GGNHC 2GB vs Samsung M471B5273DH0-CH9 4GB

Overall score
star star star star star
ASint Technology SSZ302G08-GGNHC 2GB

ASint Technology SSZ302G08-GGNHC 2GB

Overall score
star star star star star
Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Differences Specifications Comments

Differences

ASint Technology SSZ302G08-GGNHC 2GB Reasons to consider
ASint Technology SSZ302G08-GGNHC 2GB
Report a bug
  • Higher memory bandwidth, mbps
    12800 left arrow 10600
    Around 1.21% higher bandwidth
Samsung M471B5273DH0-CH9 4GB Reasons to consider
Samsung M471B5273DH0-CH9 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    47 left arrow 95
    Around -102% lower latency
  • Faster reading speed, GB/s
    9.3 left arrow 4.2
    Average value in the tests
  • Faster write speed, GB/s
    5.9 left arrow 3.1
    Average value in the tests

Specifications

Complete list of technical specifications
ASint Technology SSZ302G08-GGNHC 2GB
Samsung M471B5273DH0-CH9 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    95 left arrow 47
  • Read speed, GB/s
    4.2 left arrow 9.3
  • Write speed, GB/s
    3.1 left arrow 5.9
  • Memory bandwidth, mbps
    12800 left arrow 10600
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    635 left arrow 1413

ASint Technology SSZ302G08-GGNHC 2GB RAM comparisons

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Samsung M471B5273DH0-CH9 4GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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