Corsair CMSO4GX3M1C1600C11 4GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Corsair CMSO4GX3M1C1600C11 4GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Overall score
star star star star star
Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

Overall score
star star star star star
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Differences

  • Below the latency in the PassMark tests, ns
    28 left arrow 31
    Around 10% lower latency
  • Faster reading speed, GB/s
    20.5 left arrow 12.6
    Average value in the tests
  • Faster write speed, GB/s
    15.5 left arrow 8.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Corsair CMSO4GX3M1C1600C11 4GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 31
  • Read speed, GB/s
    12.6 left arrow 20.5
  • Write speed, GB/s
    8.3 left arrow 15.5
  • Memory bandwidth, mbps
    12800 left arrow 25600
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 9 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2112 left arrow 3649
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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