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Corsair CMSO4GX3M1C1600C11 4GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Compare
Corsair CMSO4GX3M1C1600C11 4GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Overall score
Corsair CMSO4GX3M1C1600C11 4GB
Overall score
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Corsair CMSO4GX3M1C1600C11 4GB
Report a bug
Below the latency in the PassMark tests, ns
28
31
Around 10% lower latency
Reasons to consider
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Report a bug
Faster reading speed, GB/s
20.5
12.6
Average value in the tests
Faster write speed, GB/s
15.5
8.3
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Corsair CMSO4GX3M1C1600C11 4GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
31
Read speed, GB/s
12.6
20.5
Write speed, GB/s
8.3
15.5
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 9 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2112
3649
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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