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Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Crucial Technology CT51264BF160B.C16F 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs Crucial Technology CT51264BF160B.C16F 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Overall score
Crucial Technology CT51264BF160B.C16F 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Report a bug
Below the latency in the PassMark tests, ns
28
42
Around 33% lower latency
Reasons to consider
Crucial Technology CT51264BF160B.C16F 4GB
Report a bug
Faster reading speed, GB/s
12.8
10.9
Average value in the tests
Faster write speed, GB/s
9.0
7.1
Average value in the tests
Higher memory bandwidth, mbps
12800
8500
Around 1.51 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Crucial Technology CT51264BF160B.C16F 4GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
28
42
Read speed, GB/s
10.9
12.8
Write speed, GB/s
7.1
9.0
Memory bandwidth, mbps
8500
12800
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
Timings / Clock speed
7-7-7-20 / 1066 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
1668
2011
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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