Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Crucial Technology CT51264BF160B.C16F 4GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs Crucial Technology CT51264BF160B.C16F 4GB

Overall score
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Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Overall score
star star star star star
Crucial Technology CT51264BF160B.C16F 4GB

Crucial Technology CT51264BF160B.C16F 4GB

Differences

  • Below the latency in the PassMark tests, ns
    28 left arrow 42
    Around 33% lower latency
  • Faster reading speed, GB/s
    12.8 left arrow 10.9
    Average value in the tests
  • Faster write speed, GB/s
    9.0 left arrow 7.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    12800 left arrow 8500
    Around 1.51 higher bandwidth

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Crucial Technology CT51264BF160B.C16F 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    28 left arrow 42
  • Read speed, GB/s
    10.9 left arrow 12.8
  • Write speed, GB/s
    7.1 left arrow 9.0
  • Memory bandwidth, mbps
    8500 left arrow 12800
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    1668 left arrow 2011
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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