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Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Crucial Technology CT51264BF160B.C16F 4GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs Crucial Technology CT51264BF160B.C16F 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
总分
Crucial Technology CT51264BF160B.C16F 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
报告一个错误
低于PassMark测试中的延时,ns
28
42
左右 33% 更低的延时
需要考虑的原因
Crucial Technology CT51264BF160B.C16F 4GB
报告一个错误
更快的读取速度,GB/s
12.8
10.9
测试中的平均数值
更快的写入速度,GB/s
9.0
7.1
测试中的平均数值
更高的内存带宽,mbps
12800
8500
左右 1.51 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Crucial Technology CT51264BF160B.C16F 4GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
28
42
读取速度,GB/s
10.9
12.8
写入速度,GB/s
7.1
9.0
内存带宽,mbps
8500
12800
Other
描述
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
时序/时钟速度
7-7-7-20 / 1066 MHz
9-9-9-24 / 1600 MHz
排名PassMark (越多越好)
1668
2011
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB RAM的比较
SK Hynix HMT351S6AFR8C-G7 4GB
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Crucial Technology CT51264BF160B.C16F 4GB RAM的比较
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471B5173QH0-YK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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报告一个错误
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Bug description
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