Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Crucial Technology CT51264BF160B.C16F 4GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs Crucial Technology CT51264BF160B.C16F 4GB

总分
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Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

总分
star star star star star
Crucial Technology CT51264BF160B.C16F 4GB

Crucial Technology CT51264BF160B.C16F 4GB

差异

  • 低于PassMark测试中的延时,ns
    28 left arrow 42
    左右 33% 更低的延时
  • 更快的读取速度,GB/s
    12.8 left arrow 10.9
    测试中的平均数值
  • 更快的写入速度,GB/s
    9.0 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽,mbps
    12800 left arrow 8500
    左右 1.51 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Crucial Technology CT51264BF160B.C16F 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时,ns
    28 left arrow 42
  • 读取速度,GB/s
    10.9 left arrow 12.8
  • 写入速度,GB/s
    7.1 left arrow 9.0
  • 内存带宽,mbps
    8500 left arrow 12800
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1668 left arrow 2011
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