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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston DT3B122GX4GBV-800I 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingston DT3B122GX4GBV-800I 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Kingston DT3B122GX4GBV-800I 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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Below the latency in the PassMark tests, ns
24
91
Around 74% lower latency
Higher memory bandwidth, mbps
19200
5600
Around 3.43% higher bandwidth
Reasons to consider
Kingston DT3B122GX4GBV-800I 4GB
Report a bug
Faster reading speed, GB/s
3
16
Average value in the tests
Faster write speed, GB/s
2,091.8
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston DT3B122GX4GBV-800I 4GB
Main characteristics
Memory type
DDR4
DDR2
Latency in PassMark, ns
24
91
Read speed, GB/s
16.0
3,796.3
Write speed, GB/s
12.5
2,091.8
Memory bandwidth, mbps
19200
5600
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC2-5600, SSTL 1.8V, CAS Supported:
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
no data
Ranking PassMark (The more the better)
2925
751
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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